Title :
Experimental demonstration of temperature stability of Si-tunnel FET over Si-MOSFET
Author :
Migita, Shinji ; Fukuda, Koichi ; Morita, Yukinori ; Ota, Hiroyuki
Author_Institution :
Collaborative Res. Team Green Nanoelectron. Center (GNC), Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
Abstract :
Temperature dependences of tunnel field-effect transistor (TFET) and MOSFET were experimentally compared on the same SOI wafer. Validity of the TFET result was corroborated by simulation. It is demonstrated that VTH shift and off-current increment of Si-TFET with temperature were smaller in comparison with Si-MOSFET. Temperature stability of TFET is promising for ultra-low power VLSI.
Keywords :
MOSFET; elemental semiconductors; silicon; MOSFET; Si; TFET; experimental demonstration; off-current increment; temperature dependences; temperature stability; tunnel field-effect transistor; ultralow power VLSI; MOSFET circuits; Photonic band gap; Stability analysis; Temperature; Temperature dependence; Thermal stability; Tunneling; MOSFET; SOI; temperature dependence; threshold voltage; tunnel FET; ultra-low power VLSI;
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2012 IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4673-0996-7
Electronic_ISBN :
2161-4636
DOI :
10.1109/SNW.2012.6243315
