DocumentCode
2652054
Title
A power BJT model for circuit simulation
Author
Talwalkar, N. ; Lauritzen, P.O. ; Fatemizadeh, B. ; Perlman, D. ; Ma, Cliff L.
Author_Institution
Dept. of Electr. Eng., Washington Univ., Seattle, WA, USA
Volume
1
fYear
1996
fDate
23-27 Jun 1996
Firstpage
50
Abstract
The power BJT is modeled using the lumped-charge method using simplified forms of the Poisson´s equation, the continuity equation and the Boltzmann relation. All important one-dimensional effects are included in the model. Only nine parameters are needed to completely specify the model except for junction capacitances and parasitic resistances. This model can be easily extended to make a BJT Darlington model
Keywords
Boltzmann equation; Poisson distribution; circuit analysis computing; power bipolar transistors; semiconductor device models; BJT Darlington model; Boltzmann relation; Poisson´s equation; circuit simulation; continuity equation; junction capacitance; lumped-charge method; one-dimensional effects; parasitic resistance; power BJT model; Analytical models; Circuit simulation; Insulated gate bipolar transistors; MOSFETs; Parameter extraction; Parasitic capacitance; Poisson equations; Radiative recombination; Robustness; SPICE;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 1996. PESC '96 Record., 27th Annual IEEE
Conference_Location
Baveno
ISSN
0275-9306
Print_ISBN
0-7803-3500-7
Type
conf
DOI
10.1109/PESC.1996.548558
Filename
548558
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