Title :
A power BJT model for circuit simulation
Author :
Talwalkar, N. ; Lauritzen, P.O. ; Fatemizadeh, B. ; Perlman, D. ; Ma, Cliff L.
Author_Institution :
Dept. of Electr. Eng., Washington Univ., Seattle, WA, USA
Abstract :
The power BJT is modeled using the lumped-charge method using simplified forms of the Poisson´s equation, the continuity equation and the Boltzmann relation. All important one-dimensional effects are included in the model. Only nine parameters are needed to completely specify the model except for junction capacitances and parasitic resistances. This model can be easily extended to make a BJT Darlington model
Keywords :
Boltzmann equation; Poisson distribution; circuit analysis computing; power bipolar transistors; semiconductor device models; BJT Darlington model; Boltzmann relation; Poisson´s equation; circuit simulation; continuity equation; junction capacitance; lumped-charge method; one-dimensional effects; parasitic resistance; power BJT model; Analytical models; Circuit simulation; Insulated gate bipolar transistors; MOSFETs; Parameter extraction; Parasitic capacitance; Poisson equations; Radiative recombination; Robustness; SPICE;
Conference_Titel :
Power Electronics Specialists Conference, 1996. PESC '96 Record., 27th Annual IEEE
Conference_Location :
Baveno
Print_ISBN :
0-7803-3500-7
DOI :
10.1109/PESC.1996.548558
