Comparative study of tri-gate- and double-gate-type poly-Si fin-channel split-gate flash memories

Author

Liu, Y.X. ; Kamei, T. ; Matsukawa, T. ; Endo, K. ; O´uchi, S. ; Tsukada, J. ; Yamauchi, H. ; Ishikawa, Y. ; Hayashida, T. ; Sakamoto, K. ; Ogura, A. ; Masahara, M.

Author_Institution

Tsukuba Central 2, Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan

fYear

2012

fDate

10-11 June 2012

Firstpage

1

Lastpage

2

Abstract

The tri-gate (TG)- and double-gate (DG)-type poly-Si fin-channel split-gate flash memories with a thin n⁺-poly-Si floating-gate (FG) have successfully been fabricated, and their electrical characteristics including the variations of threshold voltage (Vt) and S-slope have been comparatively investigated. It was experimentally found that better short-channel effect (SCE) immunity, smaller V_t variations, and a higher program speed are obtained in the TG-type flash memories than in the DG-type memories. Moreover, it was also confirmed that over-erase is effectively suppressed by split-gate structure.

Keywords

elemental semiconductors; flash memories; silicon; DG-type memories; S-slope; Si; TG-type flash memories; double-gate-type poly-Si fin-channel split-gate flash memories; electrical characteristics; higher program speed; short-channel effect immunity; split-gate structure; thin n-poly-Si floating-gate; threshold voltage; trigate-type poly-Si fin-channel split-gate flash memories; Controllability; Electric variables; Fabrication; Logic gates; Split gate flash memory cells; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Nanoelectronics Workshop (SNW), 2012 IEEE

Conference_Location

Honolulu, HI

ISSN

2161-4636

Print_ISBN

978-1-4673-0996-7

Electronic_ISBN

2161-4636

Type

conf

DOI

10.1109/SNW.2012.6243318

Filename

6243318