Title :
A novel gate-all-around ultra-thin p-channel poly-Si TFT functioning as transistor and flash memory with silicon nanocrystals
Author :
Chen, Hung-Bin ; Lin, Shih-Han ; Wu, Jia-Jiun ; Wu, Yung-Chun ; Chang, Chun-Yen
Author_Institution :
Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
A novel gate-all-around ultra-thin p-channel poly-Si TFT functioning as transistor and flash memory with silicon nanocrystals have been successfully demonstrated. The process is simple and mask free. For the 3-nm-thick channel devices, the S.S. of 88 mV/dec and Ion/Ioff ratio of more than 108 can be achieved. Extreme low applied voltage for band-to-band-tunneling-induced hot electron injection tunneling (BBHE) operation and excellent retention are proposed.
Keywords :
elemental semiconductors; flash memories; nanostructured materials; silicon; thin film transistors; tunnelling; Ion-Ioff ratio; Si; band-band-tunneling-induced hot electron injection tunneling operation; channel devices; flash memory; gate-all-around ultrathin p-channel poly-Si TFT; low applied voltage; silicon nanocrystals; size 3 nm; Flash memory; Logic gates; Nanocrystals; Nonvolatile memory; Silicon; Thin film transistors; Voltage control;
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2012 IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4673-0996-7
Electronic_ISBN :
2161-4636
DOI :
10.1109/SNW.2012.6243321
