• DocumentCode
    2652174
  • Title

    Self Activated, 20 kW X-Band Bulk Effect Semiconductor Limiter

  • Author

    Morris, G. ; Higgins, V. ; Hall, G. ; Anand, Y. ; Bilotta, R. ; Jellison, F.

  • fYear
    1979
  • fDate
    April 30 1979-May 2 1979
  • Firstpage
    243
  • Lastpage
    248
  • Abstract
    A self activated solid-state X-band multi-stage receiver protector using a high power bulk semiconductor limiter followed by a two-stage junction diode limiter has been developed for military RADAR applications. The receiver protector handles 20 kW of peak power at a 0.25 mu sec pulse width and 4000Hz pulse repetition frequency. Spike and flat leakage powers are less than 250 mW and 50 mW respectively. High volume semiconductor batch processes and fabrication techniques were implemented to obtain this low cost, yet reliable receiver protector. In addition the bulk limiter concept has been successfully applied to millimeter wave frequency.
  • Keywords
    Costs; Fabrication; Frequency; Millimeter wave technology; Protection; Radar applications; Semiconductor device reliability; Semiconductor diodes; Solid state circuits; Space vector pulse width modulation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1979 IEEE MTT-S International
  • Conference_Location
    Orlando, FL, USA
  • Type

    conf

  • DOI
    10.1109/MWSYM.1979.1124032
  • Filename
    1124032