Title :
Counter dipole layer formation in SiO2/high-k/SiO2/Si gate stacks
Author :
Hibino, S. ; Nishimura, T. ; Nagashio, K. ; Kita, K. ; Toriumi, A.
Author_Institution :
Dept. of Mater. Eng., Univ. of Tokyo, Tokyo, Japan
Abstract :
This paper presents experimental results of the counter dipole formation in SiO2/high-k (Al2O3 and Y2O3)/SiO2/Si gate stacks for the first time. The results definitely support the high-k/SiO2 interface dipole layer formation in metal/high-k gate CMOS.
Keywords :
CMOS integrated circuits; alumina; elemental semiconductors; high-k dielectric thin films; pulsed laser deposition; semiconductor-insulator boundaries; silicon; silicon compounds; yttrium compounds; SiO2-Al2O3-SiO2-Si; SiO2-Y2O3-SiO2-Si; counter dipole layer formation; high-k gate stacks; high-k interface dipole layer formation; metal-high-k gate CMOS; pulsed laser deposition; Aluminum oxide; Dielectric films; Gold; High K dielectric materials; Logic gates; Radiation detectors; Silicon;
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2012 IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4673-0996-7
Electronic_ISBN :
2161-4636
DOI :
10.1109/SNW.2012.6243325
