Title :
Wide Band, Dual-Gate GaAs F.E.T. Output Limiters
Author :
Hamilton, R.J., Jr.
fDate :
April 30 1979-May 2 1979
Abstract :
The use of dual-gate, GaAS FET devices as lower power output limiters in S- and X-Band is presented. Device characteristics, circuit design and advantages including a sharper saturation knee, small signal suppression, low loss and wide bandwidth performance are discussed.
Keywords :
Bandwidth; Circuit synthesis; Circuit testing; FETs; Gallium arsenide; Knee; Power generation; Radio frequency; Scattering parameters; Wideband;
Conference_Titel :
Microwave Symposium Digest, 1979 IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
DOI :
10.1109/MWSYM.1979.1124035
