Title :
Scalable thermal resistance model for single and multi-finger silicon-on-insulator MOSFETs
Author :
Khandelwal, S. ; Watts, J. ; Tamilmani, E. ; Wagner, L.
Author_Institution :
Dept. of Electron. & Telecommun., Norwegian Univ. of Sci. & Technol., Trondheim, Norway
Abstract :
This paper presents a thermal resistance model for silicon-on-insulator MOSFETs. The proposed model accounts for various heat dissipation paths in the device accurately and is accurate for both multi and single finger devices. Model development is based on carefully designed test structures to account for different heat dissipations paths. Improvement in the drain current fits across devices when using proposed model over standard BSIMSOI4.3 validates the model.
Keywords :
MOSFET; semiconductor device models; semiconductor device testing; silicon-on-insulator; thermal resistance; BSIMSOI4.3; MOSFET; designed test structures; drain current; heat dissipation; multifinger devices; scalable thermal resistance; silicon-on-insulator; single finger devices; Logic gates; MOSFET circuits; MOSFETs; Mathematical model; Thermal conductivity; Thermal resistance;
Conference_Titel :
Microelectronic Test Structures (ICMTS), 2011 IEEE International Conference on
Conference_Location :
Amsterdam
Print_ISBN :
978-1-4244-8526-0
Electronic_ISBN :
1071-9032
DOI :
10.1109/ICMTS.2011.5976843
