Title :
Matching characteristics of metal resistors
Author :
Namba, Hiroaki ; Hashimoto, Takasuke ; Hayashi, Kenji ; Furumiya, Masayuki
Author_Institution :
Device Framework Dev. Dept., Renesas Electron. Corp., Kawasaki, Japan
Abstract :
This paper describes feasibility study on metal wiring resistors. Using 130nm technology node process, matching characteristics of metal wirings are discussed. It is found that precision of tungsten resistor fabricated by damascene process is as high as those of polycrystalline-silicon and polycrystalline-silicon with silicide resistors in the broad temperature. It is likely that tungsten can provide electrical, mechanical robust and highly reliable resistors.
Keywords :
elemental semiconductors; nanotechnology; precision engineering; resistors; semiconductor device manufacture; semiconductor device reliability; silicon; tungsten; Si; damascene process; electrical resistors; mechanical robust resistors; metal wiring resistors; node process; reliable resistors; resistor precision; size 130 nm; Conferences; Microelectronics; matching; metal resistor; tungsten;
Conference_Titel :
Microelectronic Test Structures (ICMTS), 2011 IEEE International Conference on
Conference_Location :
Amsterdam
Print_ISBN :
978-1-4244-8526-0
Electronic_ISBN :
1071-9032
DOI :
10.1109/ICMTS.2011.5976844
