• DocumentCode
    2652246
  • Title

    Simultaneous carrier transport enhancement and variability reduction in Si MOSFETs by insertion of partial monolayers of oxygen

  • Author

    Mears, R.J. ; Xu, N. ; Damrongplasit, N. ; Takeuchi, H. ; Stephenson, R.J. ; Cody, N.W. ; Yiptong, A. ; Huang, X. ; Hytha, M. ; King-Liu, T.-J.

  • Author_Institution
    Mears Technol., Univ. of California, Newton, MA, USA
  • fYear
    2012
  • fDate
    10-11 June 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We demonstrate simultaneous NMOS and PMOS high-field mobility enhancement and variability reduction by inserting partial monolayers of oxygen during silicon epitaxy of the channel layer.
  • Keywords
    MOSFET; elemental semiconductors; epitaxial growth; monolayers; oxygen; semiconductor growth; silicon; MOSFET; NMOS high-field mobility enhancement; O; PMOS high-field mobility enhancement; Si; channel layer; oxygen; partial monolayers; silicon epitaxy; simultaneous carrier transport enhancement; variability reduction; Doping profiles; Epitaxial growth; Logic gates; MOS devices; Random access memory; Semiconductor process modeling; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop (SNW), 2012 IEEE
  • Conference_Location
    Honolulu, HI
  • ISSN
    2161-4636
  • Print_ISBN
    978-1-4673-0996-7
  • Electronic_ISBN
    2161-4636
  • Type

    conf

  • DOI
    10.1109/SNW.2012.6243326
  • Filename
    6243326
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2652246