Title :
Simultaneous carrier transport enhancement and variability reduction in Si MOSFETs by insertion of partial monolayers of oxygen
Author :
Mears, R.J. ; Xu, N. ; Damrongplasit, N. ; Takeuchi, H. ; Stephenson, R.J. ; Cody, N.W. ; Yiptong, A. ; Huang, X. ; Hytha, M. ; King-Liu, T.-J.
Author_Institution :
Mears Technol., Univ. of California, Newton, MA, USA
Abstract :
We demonstrate simultaneous NMOS and PMOS high-field mobility enhancement and variability reduction by inserting partial monolayers of oxygen during silicon epitaxy of the channel layer.
Keywords :
MOSFET; elemental semiconductors; epitaxial growth; monolayers; oxygen; semiconductor growth; silicon; MOSFET; NMOS high-field mobility enhancement; O; PMOS high-field mobility enhancement; Si; channel layer; oxygen; partial monolayers; silicon epitaxy; simultaneous carrier transport enhancement; variability reduction; Doping profiles; Epitaxial growth; Logic gates; MOS devices; Random access memory; Semiconductor process modeling; Silicon;
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2012 IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4673-0996-7
Electronic_ISBN :
2161-4636
DOI :
10.1109/SNW.2012.6243326
