DocumentCode :
2652270
Title :
Effect of Dummy fills on characteristics of passive devices in CMOS millimeter-wave circuits
Author :
Tsuchiya, Akira ; Onodera, Hidetoshi
Author_Institution :
Dept. of Commun. & Comput. Eng., Kyoto Univ., Kyoto, Japan
fYear :
2009
fDate :
20-23 Oct. 2009
Firstpage :
296
Lastpage :
299
Abstract :
This paper discusses issues of dummy fill in high frequency CMOS circuits. dummy fill is a small oating metal to suppress the metal thickness variation. In high frequency, eddy current induced in the dummy fills affect the electrical performance of passive devices. We introduce the effect on a transmission-line and a spiral inductor. We discuss which dummy fills have significant effect on the performance and show a design strategy of on-chip spiral inductor with dummy fills.
Keywords :
CMOS integrated circuits; MIMIC; inductors; passive networks; CMOS millimeter-wave circuits; dummy fill effect; eddy current; high frequency CMOS circuits; metal thickness variation; on-chip spiral inductor; passive devices; transmission-line; Capacitance; Digital circuits; Eddy currents; Frequency; Inductors; Integrated circuit interconnections; Millimeter wave circuits; Spirals; Transmission lines; Wire; CMOS millimeter-wave circuit; Spiral inductor; dummy fill; transimission-line;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ASIC, 2009. ASICON '09. IEEE 8th International Conference on
Conference_Location :
Changsha, Hunan
Print_ISBN :
978-1-4244-3868-6
Electronic_ISBN :
978-1-4244-3870-9
Type :
conf
DOI :
10.1109/ASICON.2009.5351449
Filename :
5351449
Link To Document :
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