• DocumentCode
    2652317
  • Title

    Recent progress of resistive switching random access memory (RRAM)

  • Author

    Wu, Yi ; Yu, Shimeng ; Guan, Ximeng ; Wong, H. -S Philip

  • Author_Institution
    Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
  • fYear
    2012
  • fDate
    10-11 June 2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper gives an overview of recent works on metal oxide resistive switching memory (RRAM). We explored the stochastic nature of resistive switching in metal oxide RRAM and a 2-D analytical solver was established to explain the switching parameter variations in HfOx-based RRAM. As an example of application beyond digital memory/storage, AlOx-based RRAM was explored for neuromorphic computing.
  • Keywords
    aluminium compounds; hafnium compounds; random-access storage; stochastic processes; 2D analytical solver; AlOx; HfOx; RRAM; digital memory-storage; metal oxide resistive switching memory; neuromorphic computing; resistive switching; resistive switching random access memory; stochastic nature; switching parameter variations; Electrodes; Hafnium compounds; Materials; Resistance; Switches; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop (SNW), 2012 IEEE
  • Conference_Location
    Honolulu, HI
  • ISSN
    2161-4636
  • Print_ISBN
    978-1-4673-0996-7
  • Electronic_ISBN
    2161-4636
  • Type

    conf

  • DOI
    10.1109/SNW.2012.6243331
  • Filename
    6243331
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2652317