DocumentCode
2652330
Title
Bidirectional selection device characteristics of ultra-thin (<3nm) TiO2 layer for 3D vertically stackable ReRAM application
Author
Woo, Jiyong ; Park, Jubong ; Shin, Jungho ; Choi, Godeuni ; Kim, Seonghyun ; Lee, Wootae ; Park, Sangsu ; Lee, Daeseok ; Cha, Euijun ; Hwang, Hyunsang
Author_Institution
Dept. of Mater. Sci. & Eng., Pohang Univ. of Sci. & Technol. (POSTECH), Pohang, South Korea
fYear
2012
fDate
10-11 June 2012
Firstpage
1
Lastpage
2
Abstract
We propose the feasibility of bidirectional selection device characteristics in ultrathin (<;3nm) TiO2 layer. We utilized the localized conducting path as virtual electrode to investigate device property at extremely scaled area. By using electrical method such as “forming” and “reset” processes in oxide, virtual electrode/sub-3nm-thick TiO2/virtual electrode structure was achieved. The measured current-voltage characteristics of fabricated device exhibited uniform bidirectional selection behavior with a high selectivity (~105) and showed the feasibility of high current density (>;106A/cm2).
Keywords
MIM devices; current density; electrodes; forming processes; random-access storage; thin film devices; thin films; titanium compounds; 3D vertically stackable ReRAM application; TiO2; bidirectional selection device characteristics; current-voltage characteristics; device property; electrical method; extremely scaled area; forming processing; high current density; localized conducting path; reset processing; size 3 nm; ultrathin layer; uniform bidirectional selection behavior; virtual electrode; Arrays; Current density; Density measurement; Electrodes; Materials; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon Nanoelectronics Workshop (SNW), 2012 IEEE
Conference_Location
Honolulu, HI
ISSN
2161-4636
Print_ISBN
978-1-4673-0996-7
Electronic_ISBN
2161-4636
Type
conf
DOI
10.1109/SNW.2012.6243332
Filename
6243332
Link To Document