DocumentCode :
2652342
Title :
Co-existed unipolar and bipolar resistive switching effect of HfOx-based RRAM
Author :
Chen, B. ; Gao, B. ; Fu, Y.H. ; Liu, R. ; Ma, L. ; Huang, P. ; Zhang, F.F. ; Liu, L.F. ; Liu, X.Y. ; Kang, J.F. ; Lian, G.J.
Author_Institution :
Shenzhen Grad. Sch., Peking Univ., Shenzhen, China
fYear :
2012
fDate :
10-11 June 2012
Firstpage :
1
Lastpage :
2
Abstract :
Both unipolar and bipolar resistive switching behaviors are demonstrated and investigated in the TaTiN/HfOx/Pt structured RRAM devices. A physical model based on the recombination among the electron-depleted oxygen vacancies (VO2+) and the oxygen ions (O2-) released from the TaTiN electrode is proposed to clarify the co-existed bipolar and unipolar resistive switching effect. In the proposed physical model, Joule heating controlled O2- decomposition and electric-field controlled O2- drift dominate the unipolar and bipolar resistive switching behaviors, respectively.
Keywords :
electrodes; hafnium compounds; platinum compounds; random-access storage; tantalum compounds; titanium compounds; vacancies (crystal); Joule heating; RRAM devices; TaTiN-HfOx-Pt; bipolar resistive switching effect; electric-field controlled drift; electron-depleted oxygen vacancies; oxygen ions; physical model; unipolar resistive switching effect; Current measurement; Electrical resistance measurement; Fluid flow measurement; Hafnium compounds; Resistance; Switches; Co-existed bipolar and unipolar resistive switching; HfOx based RRAM;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2012 IEEE
Conference_Location :
Honolulu, HI
ISSN :
2161-4636
Print_ISBN :
978-1-4673-0996-7
Electronic_ISBN :
2161-4636
Type :
conf
DOI :
10.1109/SNW.2012.6243333
Filename :
6243333
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2652342
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