Co-existed unipolar and bipolar resistive switching effect of HfOx-based RRAM

Author

Chen, B. ; Gao, B. ; Fu, Y.H. ; Liu, R. ; Ma, L. ; Huang, P. ; Zhang, F.F. ; Liu, L.F. ; Liu, X.Y. ; Kang, J.F. ; Lian, G.J.

Author_Institution

Shenzhen Grad. Sch., Peking Univ., Shenzhen, China

fYear

2012

fDate

10-11 June 2012

Firstpage

1

Lastpage

2

Abstract

Both unipolar and bipolar resistive switching behaviors are demonstrated and investigated in the TaTiN/HfOx/Pt structured RRAM devices. A physical model based on the recombination among the electron-depleted oxygen vacancies (V_O²⁺) and the oxygen ions (O^2-) released from the TaTiN electrode is proposed to clarify the co-existed bipolar and unipolar resistive switching effect. In the proposed physical model, Joule heating controlled O^2- decomposition and electric-field controlled O^2- drift dominate the unipolar and bipolar resistive switching behaviors, respectively.

Keywords

electrodes; hafnium compounds; platinum compounds; random-access storage; tantalum compounds; titanium compounds; vacancies (crystal); Joule heating; RRAM devices; TaTiN-HfO_x-Pt; bipolar resistive switching effect; electric-field controlled drift; electron-depleted oxygen vacancies; oxygen ions; physical model; unipolar resistive switching effect; Current measurement; Electrical resistance measurement; Fluid flow measurement; Hafnium compounds; Resistance; Switches; Co-existed bipolar and unipolar resistive switching; HfOx based RRAM;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Nanoelectronics Workshop (SNW), 2012 IEEE

Conference_Location

Honolulu, HI

ISSN

2161-4636

Print_ISBN

978-1-4673-0996-7

Electronic_ISBN

2161-4636

Type

conf

DOI

10.1109/SNW.2012.6243333

Filename

6243333