DocumentCode
2652360
Title
Characteristics of Metal/Ferroelectric (PVDF-TrFE)/Graphene (MFG) device
Author
Hwang, H.J. ; Paek, E.J. ; Yang, J.H. ; Kang, C.G. ; Lee, B.H.
Author_Institution
Sch. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol., Gwangju, South Korea
fYear
2012
fDate
10-11 June 2012
Firstpage
1
Lastpage
2
Abstract
Characteristics of new reconfigurable graphene device with Metal/ Ferroelectric (PVDF-TrFE)/Graphene (MFG) stack is presented. Key features include programming speed <; 100nsec, retention up to 1000sec, endurance upto 1000 cycles and more than 775% on/off ratio. While memory like functionalities are primarily presented in this paper, MFG device has many versatile applications such as reconfigurable interconnect resistor or logic device, pressure sensitive touch sensor and so on.
Keywords
ferroelectric devices; graphene; logic devices; resistors; tactile sensors; C; logic device; metal-ferroelectric graphene stack; metal-ferroelectric-graphene device; on-off ratio; pressure sensitive touch sensor; programming speed; reconfigurable graphene device; reconfigurable interconnect resistor; while memory like functionalities; Electrodes; Metals; Modulation; Plasmas; Substrates; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon Nanoelectronics Workshop (SNW), 2012 IEEE
Conference_Location
Honolulu, HI
ISSN
2161-4636
Print_ISBN
978-1-4673-0996-7
Electronic_ISBN
2161-4636
Type
conf
DOI
10.1109/SNW.2012.6243335
Filename
6243335
Link To Document