Title :
Characteristics of Metal/Ferroelectric (PVDF-TrFE)/Graphene (MFG) device
Author :
Hwang, H.J. ; Paek, E.J. ; Yang, J.H. ; Kang, C.G. ; Lee, B.H.
Author_Institution :
Sch. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol., Gwangju, South Korea
Abstract :
Characteristics of new reconfigurable graphene device with Metal/ Ferroelectric (PVDF-TrFE)/Graphene (MFG) stack is presented. Key features include programming speed <; 100nsec, retention up to 1000sec, endurance upto 1000 cycles and more than 775% on/off ratio. While memory like functionalities are primarily presented in this paper, MFG device has many versatile applications such as reconfigurable interconnect resistor or logic device, pressure sensitive touch sensor and so on.
Keywords :
ferroelectric devices; graphene; logic devices; resistors; tactile sensors; C; logic device; metal-ferroelectric graphene stack; metal-ferroelectric-graphene device; on-off ratio; pressure sensitive touch sensor; programming speed; reconfigurable graphene device; reconfigurable interconnect resistor; while memory like functionalities; Electrodes; Metals; Modulation; Plasmas; Substrates; Switches;
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2012 IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4673-0996-7
Electronic_ISBN :
2161-4636
DOI :
10.1109/SNW.2012.6243335
