• DocumentCode
    2652383
  • Title

    Admittance characterization and interface trap property extraction for Ge/III-V MOS structures

  • Author

    Martens, Koen

  • Author_Institution
    IMEC, Belgium
  • fYear
    2011
  • fDate
    4-7 April 2011
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    MOS admittance characteristics, essential for extracting crucial parameters of MOS devices, can be heavily distorted because of Ge/III-V properties such as poor interface passivation and bandgap. These distortions can result in far-reaching misinterpretations and large errors in extracted parameters. The differing admittance characteristics and related adapted interface trap extraction methods are elaborated for Ge/III-V MOS.
  • Keywords
    III-V semiconductors; MIS devices; elemental semiconductors; energy gap; germanium; passivation; Ge; Ge/III-V MOS structures; MOS admittance; MOS devices; admittance characterization; bandgap; interface passivation; interface trap extraction; interface trap property extraction; Admittance; Conferences; Face; MOS devices; Microelectronics; Passivation; Photonic band gap;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronic Test Structures (ICMTS), 2011 IEEE International Conference on
  • Conference_Location
    Amsterdam
  • ISSN
    1071-9032
  • Print_ISBN
    978-1-4244-8526-0
  • Electronic_ISBN
    1071-9032
  • Type

    conf

  • DOI
    10.1109/ICMTS.2011.5976850
  • Filename
    5976850
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2652383