• DocumentCode
    2652384
  • Title

    Silicon single-electron transfer devices: Ultimate control of electric charge

  • Author

    Fujiwara, Akira ; Yamahata, Gento ; Nishiguchi, Katsuhiko ; Lansbergen, Gabriel P. ; Ono, Yukinori

  • Author_Institution
    NTT Basic Res. Labs., NTT Corp., Atsugi, Japan
  • fYear
    2012
  • fDate
    10-11 June 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this paper we describe our recent efforts to develop SE transfer devices based on Si nanotechnology.
  • Keywords
    electric charge; elemental semiconductors; silicon; single electron transistors; Si; electric charge; nanotechnology; silicon single-electron transfer devices; single-electron transistor; Clocks; Current measurement; Logic gates; Semiconductor device measurement; Sensors; Silicon; Standards;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop (SNW), 2012 IEEE
  • Conference_Location
    Honolulu, HI
  • ISSN
    2161-4636
  • Print_ISBN
    978-1-4673-0996-7
  • Electronic_ISBN
    2161-4636
  • Type

    conf

  • DOI
    10.1109/SNW.2012.6243336
  • Filename
    6243336
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2652384