Title :
Front-end-of-line quadrature-clocked voltage-dependent capacitance measurement
Author :
Polonsky, Stas ; Solomon, Paul ; Liao, Jiun-Hsin ; Medina, Lou ; Ketchen, Mark
Author_Institution :
T.J.. Watson Res. Center, IBM Res., Yorktown Heights, NY, USA
Abstract :
We report on Front-End-Of-Line Quadrature-clocked Voltage-dependent Capacitance Measurement (QVCM), a charge based capacitance measurement technique applicable to modern logic CMOS technologies with leaky gate oxides. QVCM test structures are designed using only first level of metal and support parallel test of multiple devices. Results for 45 nm SOI FETs illustrate the power of the developed technique.
Keywords :
CMOS logic circuits; capacitance measurement; field effect transistors; integrated circuit design; integrated circuit testing; logic testing; silicon-on-insulator; QVCM test structures; SOI FET; charge-based capacitance measurement technique; front-end-of-line quadrature-clocked voltage-dependent capacitance measurement; leaky gate oxides; logic CMOS technologies; size 45 nm; Capacitance; Capacitance measurement; Clocks; Current measurement; Detectors; FETs; Logic gates;
Conference_Titel :
Microelectronic Test Structures (ICMTS), 2011 IEEE International Conference on
Conference_Location :
Amsterdam
Print_ISBN :
978-1-4244-8526-0
Electronic_ISBN :
1071-9032
DOI :
10.1109/ICMTS.2011.5976851
