Title :
High-frequency properties of Si single-electron transistor
Author :
Takenaka, Hiroto ; Shinohara, Michito ; Uchida, Takafumi ; Arita, Masashi ; Fujiwara, Akira ; Ono, Yukinori ; Nishiguchi, Katsuhiko ; Inokawa, Hiroshi ; Takahashi, Yasuo
Author_Institution :
Dept. of Inf. Sci. & Technol., Hokkaido Univ., Sapporo, Japan
Abstract :
High-frequency limit of Si single-electron transistor (SET) is investigated. Since the SETs inevitably have tunnel barriers, the operation speed is thought to be low. To measure the high frequency properties of SETs, we employed their special rectification characteristics, which occurred due to the asymmetry of Coulomb diamond when alternating current voltage was applied to the drain terminal. By the use of the effect, we evaluated the high-frequency properties of Si SETs.
Keywords :
elemental semiconductors; silicon; single electron transistors; Coulomb diamond asymmetry; SET; Si; alternating current voltage; drain terminal; high frequency properties; high-frequency limit; high-frequency properties; single-electron transistor; special rectification characteristics; tunnel barriers; Current measurement; Cutoff frequency; Frequency measurement; MOSFETs; Resistance; Silicon; Voltage measurement;
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2012 IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4673-0996-7
Electronic_ISBN :
2161-4636
DOI :
10.1109/SNW.2012.6243339
