DocumentCode :
2652429
Title :
Modeling the frequency dependence of MOSFET gate capacitance
Author :
Zhu, Zeqin ; Gildenblat, Gennady ; McAndrew, Colin C. ; Lim, Ik-sung
Author_Institution :
Sch. of Electr., Comput. & Energy Eng., Arizona State Univ., Tempe, AZ, USA
fYear :
2011
fDate :
4-7 April 2011
Firstpage :
13
Lastpage :
18
Abstract :
This paper investigates the frequency dependence of gate capacitance Cgg of MOS structures. In inversion Cgg decreases as frequency increases due to charge inertia and gate resistance effects. In accumulation Cgg also decreases as frequency increases; we demonstrate that this is due to bulk and, to a lesser extent, gate resistances. We show that the non-quasi-static PSP compact model can accurately represent the frequency dependence of MOS transistor Cgg in all regions of operation, and derive a new analytic frequency dependence model for Cgg.
Keywords :
MIS structures; MOSFET; semiconductor device models; MOS structures; MOS transistor; MOSFET gate capacitance; charge inertia; frequency dependence; gate resistance; nonquasi-static PSP compact model; Analytical models; Capacitance; Data models; Frequency dependence; Logic gates; MOSFETs; Resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronic Test Structures (ICMTS), 2011 IEEE International Conference on
Conference_Location :
Amsterdam
ISSN :
1071-9032
Print_ISBN :
978-1-4244-8526-0
Electronic_ISBN :
1071-9032
Type :
conf
DOI :
10.1109/ICMTS.2011.5976853
Filename :
5976853
Link To Document :
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