• DocumentCode
    2652433
  • Title

    A single-event transient hardened phase-locked loop in 0.18 µm CMOS process

  • Author

    Zhenyu, Zhao ; Minxuan, Zhang ; Jihua, Chen ; Bin, Guo

  • Author_Institution
    Sch. of Comput. Sci., Nat. Univ. of Defense Technol., Changsha, China
  • fYear
    2009
  • fDate
    20-23 Oct. 2009
  • Firstpage
    284
  • Lastpage
    287
  • Abstract
    By implementing a novel complementary current limiter (CCL), a phase-locked loop (PLL) has been developed for improved single-event transient (SET) tolerance in 0.18 μm CMOS process. Simulation results show that the CCL circuit can significantly reduce the voltage perturbation on the input of the voltage-controlled oscillator (VCO) by up to 92.8%, and reduce the recovery time of the PLL by up to 76.4% in the presence of SETs in the charge pump (CP). And it can also improve the error pulses and phase displacement of the output clock greatly. Moreover, the CCL circuit can be readily applied to other PLL topologies.
  • Keywords
    CMOS integrated circuits; charge pump circuits; phase locked loops; voltage-controlled oscillators; CCL circuit; CMOS process; PLL topologies; charge pump; complementary current limiter; error pulses; phase displacement; single-event transient hardened phase-locked loop; size 0.18 μm; voltage perturbation; voltage-controlled oscillator; CMOS process; Charge pumps; Circuit simulation; Circuit topology; Clocks; Current limiters; Neutrons; Phase frequency detector; Phase locked loops; Voltage-controlled oscillators; RHBD; charge pump; phase-locked loop; single-event transient;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    ASIC, 2009. ASICON '09. IEEE 8th International Conference on
  • Conference_Location
    Changsha, Hunan
  • Print_ISBN
    978-1-4244-3868-6
  • Electronic_ISBN
    978-1-4244-3870-9
  • Type

    conf

  • DOI
    10.1109/ASICON.2009.5351458
  • Filename
    5351458