DocumentCode
2652433
Title
A single-event transient hardened phase-locked loop in 0.18 µm CMOS process
Author
Zhenyu, Zhao ; Minxuan, Zhang ; Jihua, Chen ; Bin, Guo
Author_Institution
Sch. of Comput. Sci., Nat. Univ. of Defense Technol., Changsha, China
fYear
2009
fDate
20-23 Oct. 2009
Firstpage
284
Lastpage
287
Abstract
By implementing a novel complementary current limiter (CCL), a phase-locked loop (PLL) has been developed for improved single-event transient (SET) tolerance in 0.18 μm CMOS process. Simulation results show that the CCL circuit can significantly reduce the voltage perturbation on the input of the voltage-controlled oscillator (VCO) by up to 92.8%, and reduce the recovery time of the PLL by up to 76.4% in the presence of SETs in the charge pump (CP). And it can also improve the error pulses and phase displacement of the output clock greatly. Moreover, the CCL circuit can be readily applied to other PLL topologies.
Keywords
CMOS integrated circuits; charge pump circuits; phase locked loops; voltage-controlled oscillators; CCL circuit; CMOS process; PLL topologies; charge pump; complementary current limiter; error pulses; phase displacement; single-event transient hardened phase-locked loop; size 0.18 μm; voltage perturbation; voltage-controlled oscillator; CMOS process; Charge pumps; Circuit simulation; Circuit topology; Clocks; Current limiters; Neutrons; Phase frequency detector; Phase locked loops; Voltage-controlled oscillators; RHBD; charge pump; phase-locked loop; single-event transient;
fLanguage
English
Publisher
ieee
Conference_Titel
ASIC, 2009. ASICON '09. IEEE 8th International Conference on
Conference_Location
Changsha, Hunan
Print_ISBN
978-1-4244-3868-6
Electronic_ISBN
978-1-4244-3870-9
Type
conf
DOI
10.1109/ASICON.2009.5351458
Filename
5351458
Link To Document