Title :
15-Watt Internally Matched GaAs FETs and 20-Watt Amplifier Operating at 6 GHz
Author :
Honjo, K. ; Takayama, Y. ; Furutsuka, T. ; Higashisaka, A. ; Hasegawa, F.
fDate :
April 30 1979-May 2 1979
Abstract :
6-GHz 15-Watt and 8-GHz 10-Watt internally matched GaAs FETs have been developed. The lumped-element two section input matching network is formed on ceramic plates with a high dielectric constant. The distributed single section output circuit is formed in microstrip pattern on an alumina plate. A 6-GHz 20-Watt balanced amplifier module has been realized using the internally matched devices which operate without any external matching.
Keywords :
Bonding; Ceramics; Circuits; Design optimization; FETs; Gain; Gallium arsenide; Impedance matching; Microstrip; Wires;
Conference_Titel :
Microwave Symposium Digest, 1979 IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
DOI :
10.1109/MWSYM.1979.1124046
