DocumentCode :
2652447
Title :
Negative Differential resistance devices with ultra-high peak-to-valley current ratio based on silicon nanowire structure
Author :
Shin, Sunhae ; Ryu, Min Woo ; Kim, Kyung Rok
Author_Institution :
Sch. of Electr. & Comput. Eng., Ulsan Nat. Inst. of Sci. & Technol., Ulsan, South Korea
fYear :
2012
fDate :
10-11 June 2012
Firstpage :
1
Lastpage :
2
Abstract :
Negative differential resistance (NDR) devices are proposed with ultra-high peak-to-valley current ratio (PVCR) over 104 based on silicon nanowire structure.
Keywords :
elemental semiconductors; nanowires; semiconductor diodes; silicon; NDR devices; Si; negative differential resistance devices; silicon nanowire structure; ultrahigh peak-valley current ratio;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2012 IEEE
Conference_Location :
Honolulu, HI
ISSN :
2161-4636
Print_ISBN :
978-1-4673-0996-7
Electronic_ISBN :
2161-4636
Type :
conf
DOI :
10.1109/SNW.2012.6243340
Filename :
6243340
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2652447
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