DocumentCode :
2652483
Title :
A single atom transistor
Author :
Simmons, M.Y.
Author_Institution :
Centre of Excellence for Quantum Comput. & Commun. Technol., Univ. of New South Wales, Sydney, NSW, Australia
fYear :
2012
fDate :
10-11 June 2012
Firstpage :
1
Lastpage :
1
Abstract :
Over the past decade we have developed a radical new strategy for the fabrication of atomic-scale devices in silicon [1]. Using this process we have demonstrated few electron, single crystal quantum dots [2], conducting nanoscale wires with widths down to ~1.5nm [3] and most recently a single atom transistor [4]. We will present atomic-scale images and electronic characteristics of these atomically precise devices and demonstrate the impact of strong vertical and lateral confinement on electron transport. We will also discuss the opportunities ahead for atomic-scale quantum computing architectures and some of the challenges to achieving truly atomically precise devices in all three spatial dimensions.
Keywords :
electrical conductivity; elemental semiconductors; nanoelectronics; nanowires; semiconductor quantum dots; silicon; transistors; Si; atomic-scale devices; atomic-scale imaging; atomic-scale quantum computing architectures; atomically precise devices; conducting nanoscale wires; electron transport; electronic characteristics; silicon; single atom transistor; single crystal quantum dots; strong lateral confinement; strong vertical confinement; Atomic measurements; Australia; Communications technology; Educational institutions; Nanotechnology; Quantum computing; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2012 IEEE
Conference_Location :
Honolulu, HI
ISSN :
2161-4636
Print_ISBN :
978-1-4673-0996-7
Electronic_ISBN :
2161-4636
Type :
conf
DOI :
10.1109/SNW.2012.6243342
Filename :
6243342
Link To Document :
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