DocumentCode :
2652485
Title :
Low cost wafer level parallel test strategy for reliability assessments in sub-32nm technology nodes
Author :
Rafik, Mustapha ; Dieudonné, François ; Morin, Gérard
Author_Institution :
TR&D/STD/TPS/ECR, STMicroelectronics, Crolles, France
fYear :
2011
fDate :
4-7 April 2011
Firstpage :
31
Lastpage :
34
Abstract :
The development of new technology nodes has seen an increase of the needs in terms of test capabilities. Because of reliability margins reduction and apparition of specific issues for Time Dependent Dielectric Breakdown or Hot Carrier Injection assessments, large sampling and long time stress at wafer level are indeed more and more often required. In this context, this paper presents the parallel testing strategy we led with the view to facing the growing requirement for reliability tests. It has consisted in the setting up of a home-made parallel test system which, combined with the integration of dedicated test structures for parallel stress and characterization purposes, allows dividing the test time by a factor up to 20 with only minor investments.
Keywords :
electric breakdown; hot carriers; integrated circuit reliability; integrated circuit testing; nanotechnology; home-made parallel test system; hot carrier injection assessments; low cost wafer level parallel test strategy; reliability assessments; size 32 nm; time dependent dielectric breakdown; Degradation; Human computer interaction; Logic gates; Semiconductor device reliability; Stress; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronic Test Structures (ICMTS), 2011 IEEE International Conference on
Conference_Location :
Amsterdam
ISSN :
1071-9032
Print_ISBN :
978-1-4244-8526-0
Electronic_ISBN :
1071-9032
Type :
conf
DOI :
10.1109/ICMTS.2011.5976856
Filename :
5976856
Link To Document :
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