Title :
Reduced drain current variability in fully depleted silicon-on-thin-BOX (SOTB) MOSFETs
Author :
Mizutani, T. ; Yamamoto, Y. ; Makiyama, H. ; Tsunomura, T. ; Iwamatsu, T. ; Oda, H. ; Sugii, N. ; Hiramoto, T.
Author_Institution :
Inst. of Ind. Sci., Univ. of Tokyo, Tokyo, Japan
Abstract :
Drain current variability in silicon-on-thin-BOX (SOTB) MOSFETs are analyzed by decomposing into current variability components and compared with conventional bulk MOSFETs. It is found that drain current variability in SOTB MOSFETs is largely suppressed thanks to not only reduced VTH variability but also reduced current-onset voltage (COV) variability due to intrinsic channel.
Keywords :
MOSFET; Si; conventional bulk MOSFET; current variability components; fully depleted silicon-on-thin-BOX MOSFET; intrinsic channel; reduced current-onset voltage variability; reduced drain current variability; Electric potential; Fluctuations; MOSFETs; Resistance; Resource description framework;
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2012 IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4673-0996-7
Electronic_ISBN :
2161-4636
DOI :
10.1109/SNW.2012.6243344
