DocumentCode :
2652524
Title :
Improved parameter extraction procedures for the R3 model
Author :
McAndrew, Colin C. ; Bettinger, Tamara
Author_Institution :
Freescale Semicond., Tempe, AZ, USA
fYear :
2011
fDate :
4-7 April 2011
Firstpage :
43
Lastpage :
48
Abstract :
This paper presents improved extraction algorithms for parameters of the R3 resistor model. For poly resistors we show how the depletion pinching parameters can be computed so that there are no numerical problems. For diffused resistors we provide a data analysis procedure that enables robust estimation of the depletion pinching parameters in the presence both of measurement noise and of velocity saturation or self-heating effects, and show that self-heating can be significantly more important than velocity saturation even for diffused resistors.
Keywords :
data analysis; integrated circuit modelling; thin film resistors; R3 resistor model; data analysis; depletion pinching parameters; diffused resistors; measurement noise; parameter extraction; poly resistors; robust estimation; self-heating effects; velocity saturation; Data models; Immune system; Junctions; Resistors; Robustness; Thermal resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronic Test Structures (ICMTS), 2011 IEEE International Conference on
Conference_Location :
Amsterdam
ISSN :
1071-9032
Print_ISBN :
978-1-4244-8526-0
Electronic_ISBN :
1071-9032
Type :
conf
DOI :
10.1109/ICMTS.2011.5976858
Filename :
5976858
Link To Document :
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