DocumentCode
2652541
Title
Contact resistance measurement structures for high frequencies
Author
Roy, Deepu ; Pijper, Ralf M T ; Tiemeijer, Luuk F. ; Wolters, Rob A M
Author_Institution
Central R&D, NXP Semicond., Eindhoven, Netherlands
fYear
2011
fDate
4-7 April 2011
Firstpage
49
Lastpage
54
Abstract
Knowledge of the interfacial contact impedance offered by the device at its operating frequency range is crucial for accurate modelling and understanding of the device. In this article, a novel modified TLM test-structure has been devised to extract interfacial contact parameters at frequencies upto 4 GHz. S-parameter measurements performed on these test-structures were validated with the measurements on identical test-structures suited for conventional DC four point force-sense measurements. Based on these measurements the electrical model for the metal-to-PCM interface is derived for different contact impedances.
Keywords
S-parameters; contact resistance; electric impedance measurement; electrical contacts; force measurement; phase change materials; DC four point force-sense measurements; S-parameter measurements; contact resistance measurement; electrical model; frequency 4 GHz; interfacial contact impedance; interfacial contact parameter extraction; metal-to-PCM interface; transfer length method test-structure; Capacitance; Contacts; Electrical resistance measurement; Impedance; Metals; Phase change materials; Resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures (ICMTS), 2011 IEEE International Conference on
Conference_Location
Amsterdam
ISSN
1071-9032
Print_ISBN
978-1-4244-8526-0
Electronic_ISBN
1071-9032
Type
conf
DOI
10.1109/ICMTS.2011.5976859
Filename
5976859
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