• DocumentCode
    2652541
  • Title

    Contact resistance measurement structures for high frequencies

  • Author

    Roy, Deepu ; Pijper, Ralf M T ; Tiemeijer, Luuk F. ; Wolters, Rob A M

  • Author_Institution
    Central R&D, NXP Semicond., Eindhoven, Netherlands
  • fYear
    2011
  • fDate
    4-7 April 2011
  • Firstpage
    49
  • Lastpage
    54
  • Abstract
    Knowledge of the interfacial contact impedance offered by the device at its operating frequency range is crucial for accurate modelling and understanding of the device. In this article, a novel modified TLM test-structure has been devised to extract interfacial contact parameters at frequencies upto 4 GHz. S-parameter measurements performed on these test-structures were validated with the measurements on identical test-structures suited for conventional DC four point force-sense measurements. Based on these measurements the electrical model for the metal-to-PCM interface is derived for different contact impedances.
  • Keywords
    S-parameters; contact resistance; electric impedance measurement; electrical contacts; force measurement; phase change materials; DC four point force-sense measurements; S-parameter measurements; contact resistance measurement; electrical model; frequency 4 GHz; interfacial contact impedance; interfacial contact parameter extraction; metal-to-PCM interface; transfer length method test-structure; Capacitance; Contacts; Electrical resistance measurement; Impedance; Metals; Phase change materials; Resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronic Test Structures (ICMTS), 2011 IEEE International Conference on
  • Conference_Location
    Amsterdam
  • ISSN
    1071-9032
  • Print_ISBN
    978-1-4244-8526-0
  • Electronic_ISBN
    1071-9032
  • Type

    conf

  • DOI
    10.1109/ICMTS.2011.5976859
  • Filename
    5976859