DocumentCode :
2652541
Title :
Contact resistance measurement structures for high frequencies
Author :
Roy, Deepu ; Pijper, Ralf M T ; Tiemeijer, Luuk F. ; Wolters, Rob A M
Author_Institution :
Central R&D, NXP Semicond., Eindhoven, Netherlands
fYear :
2011
fDate :
4-7 April 2011
Firstpage :
49
Lastpage :
54
Abstract :
Knowledge of the interfacial contact impedance offered by the device at its operating frequency range is crucial for accurate modelling and understanding of the device. In this article, a novel modified TLM test-structure has been devised to extract interfacial contact parameters at frequencies upto 4 GHz. S-parameter measurements performed on these test-structures were validated with the measurements on identical test-structures suited for conventional DC four point force-sense measurements. Based on these measurements the electrical model for the metal-to-PCM interface is derived for different contact impedances.
Keywords :
S-parameters; contact resistance; electric impedance measurement; electrical contacts; force measurement; phase change materials; DC four point force-sense measurements; S-parameter measurements; contact resistance measurement; electrical model; frequency 4 GHz; interfacial contact impedance; interfacial contact parameter extraction; metal-to-PCM interface; transfer length method test-structure; Capacitance; Contacts; Electrical resistance measurement; Impedance; Metals; Phase change materials; Resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronic Test Structures (ICMTS), 2011 IEEE International Conference on
Conference_Location :
Amsterdam
ISSN :
1071-9032
Print_ISBN :
978-1-4244-8526-0
Electronic_ISBN :
1071-9032
Type :
conf
DOI :
10.1109/ICMTS.2011.5976859
Filename :
5976859
Link To Document :
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