DocumentCode :
2652544
Title :
Low-dislocation-density 4" 0 Ø GaAs single crystal growth under arsenic atmosphere
Author :
Kawase, Toshihiro ; Fujiwara, Shingo ; Kimura, K. ; Tatsumi, Motoi ; Shirakawa, T. ; Tada, Kazuki
Author_Institution :
Sumitomo Electric Industries, Ltd., Japan
fYear :
1992
fDate :
21-24 Apr 1992
Firstpage :
85
Lastpage :
90
Keywords :
Atmosphere; Capacitive sensors; Crystals; Epitaxial layers; Gallium arsenide; Molecular beam epitaxial growth; Random access memory; Strain measurement; Substrates; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semi-Insulating III-V Materials, 1992 Proceedings of the 7th Conference on
Print_ISBN :
0-7503-0242-9
Type :
conf
DOI :
10.1109/SIM.1992.752681
Filename :
752681
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2652544
بازگشت