Title :
Low standby power charge trap flash memory with tunneling field effect transistor
Author :
Han, Min Su ; Lee, Jong Ho ; Seo, Dongsun ; Park, Chong-Dae ; Oh, Youngcheol ; Cho, Il Hwan
Abstract :
SONOS memory with TFET is proposed to achieve off leakage current characteristics. SONOS memory with TFET exhibits extremely small off state leakage current, good FN program efficiency. Program characteristics and disturbance characteristics were investigated with device simulation. It is expected that SONOS memory with TFET can be a promising candidate for mobile devices with require low-power consumption.
Keywords :
field effect transistors; leakage currents; power consumption; tunnelling; FN program efficiency; SONOS memory; TFET; device simulation; disturbance characteristics; leakage current characteristics; low standby power charge trap flash memory; low-power consumption; mobile devices; off state leakage current; program characteristics; tunneling field effect transistor; Electric potential; Leakage current; Logic gates; Programming; SONOS devices; Threshold voltage; Tunneling;
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2012 IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4673-0996-7
Electronic_ISBN :
2161-4636
DOI :
10.1109/SNW.2012.6243349
