DocumentCode
2652598
Title
Low standby power charge trap flash memory with tunneling field effect transistor
Author
Han, Min Su ; Lee, Jong Ho ; Seo, Dongsun ; Park, Chong-Dae ; Oh, Youngcheol ; Cho, Il Hwan
fYear
2012
fDate
10-11 June 2012
Firstpage
1
Lastpage
2
Abstract
SONOS memory with TFET is proposed to achieve off leakage current characteristics. SONOS memory with TFET exhibits extremely small off state leakage current, good FN program efficiency. Program characteristics and disturbance characteristics were investigated with device simulation. It is expected that SONOS memory with TFET can be a promising candidate for mobile devices with require low-power consumption.
Keywords
field effect transistors; leakage currents; power consumption; tunnelling; FN program efficiency; SONOS memory; TFET; device simulation; disturbance characteristics; leakage current characteristics; low standby power charge trap flash memory; low-power consumption; mobile devices; off state leakage current; program characteristics; tunneling field effect transistor; Electric potential; Leakage current; Logic gates; Programming; SONOS devices; Threshold voltage; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon Nanoelectronics Workshop (SNW), 2012 IEEE
Conference_Location
Honolulu, HI
ISSN
2161-4636
Print_ISBN
978-1-4673-0996-7
Electronic_ISBN
2161-4636
Type
conf
DOI
10.1109/SNW.2012.6243349
Filename
6243349
Link To Document