DocumentCode
2652633
Title
MBE heterostructure device instabilities related to interfacial carbon impurities
Author
Gray, M.L. ; Spector, M. ; Yoder, J.D.
Author_Institution
AT&T Bell Laboratories, PA
fYear
1992
fDate
21-24 Apr 1992
Firstpage
117
Lastpage
124
Keywords
Epitaxial layers; FETs; Frequency; Gallium arsenide; Impedance measurement; Impurities; Molecular beam epitaxial growth; Pollution measurement; Superlattices; Surface cleaning;
fLanguage
English
Publisher
ieee
Conference_Titel
Semi-Insulating III-V Materials, 1992 Proceedings of the 7th Conference on
Print_ISBN
0-7503-0242-9
Type
conf
DOI
10.1109/SIM.1992.752686
Filename
752686
Link To Document