DocumentCode :
2652638
Title :
A phase shift controlled current-fed Quasi-Switched-Capacitor isolated dc/dc converter with GaN HEMTs for photovoltaic applications
Author :
Lixing Fu ; Xuan Zhang ; Feng Guo ; Jin Wang
Author_Institution :
Dept. of Electr. & Comput. Eng., Ohio State Univ., Columbus, OH, USA
fYear :
2015
fDate :
15-19 March 2015
Firstpage :
191
Lastpage :
198
Abstract :
This paper proposes a phase shift controlled isolated dc/dc converter for photovoltaic applications, which is composed of a current-fed half bridge and a Quasi-Switched-Capacitor (QSC) cell. The proposed converter employs phase shift control to realize a wide voltage regulation range, and features zero-voltage-switching on all the switches. Compared to traditional H-bridge and half bridge, the secondary side QSC circuit exhibits a higher boost ratio and reduced voltage stress on devices and transformer. The circuit structure, operation principles and soft-switching analysis of the converter are presented. A 1-kW gallium nitride device based circuit prototype is used to verify the circuit analysis. Both simulation and experimental results are presented.
Keywords :
DC-DC power convertors; gallium compounds; high electron mobility transistors; photovoltaic power systems; voltage control; zero voltage switching; GaN; QSC circuit; gallium nitride HEMT; gallium nitride device; isolated dc/dc converter; phase shift controlled current-fed quasi-switched-capacitor; photovoltaic applications; soft-switching analysis; voltage regulation; zero-voltage-switching; Bridge circuits; Capacitors; Gallium nitride; HEMTs; Low voltage; Stress; Switches; current-fed; gallium nitride (GaN); high boost ratio; high frequency; isolated dc/dc; phase shift control; photovoltaic (PV); quasi-switched-capacitor (QSC);
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applied Power Electronics Conference and Exposition (APEC), 2015 IEEE
Conference_Location :
Charlotte, NC
Type :
conf
DOI :
10.1109/APEC.2015.7104351
Filename :
7104351
Link To Document :
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