DocumentCode :
2652640
Title :
Exploring capacitance-voltage measurements to find the piezoelectric coefficient of aluminum nitride
Author :
van Hemert, T. ; Sarakiotis, D. ; Jose, S. ; Hueting, R.J.E. ; Schmitz, J.
Author_Institution :
MESA+ Inst. for Nanotechnol., Univ. of Twente, Enschede, Netherlands
fYear :
2011
fDate :
4-7 April 2011
Firstpage :
69
Lastpage :
73
Abstract :
In this work we explore an uncommon method to extract the piezoelectric coefficient of the piezoelectric material aluminum nitride. The method exploits the bias dependence of CV (capacitance voltage) measurements on MπM (metal-piezoelectric-metal) capacitors. We propose a bias dependent capacitance model for piezoelectric capacitors such as BAW (Bulk Acoustic Wave) resonators. With this model we extract both the piezoelectric coefficient and dielectric constant from the CV recording. In contrast to earlier reports we verified that our results do not depend on layer thickness, biasing and sweep direction of the CV recording. In addition, we discuss the accuracy of our measurements in depth.
Keywords :
aluminium compounds; bulk acoustic wave devices; capacitance measurement; capacitors; permittivity; piezoelectric devices; piezoelectric materials; resonators; voltage measurement; AlN; BAW resonators; aluminum nitride; bias dependence; bulk acoustic wave resonators; capacitance-voltage measurements; dielectric constant; metal-piezoelectric-metal capacitors; piezoelectric capacitors; piezoelectric coefficient; piezoelectric material; Capacitance; Capacitance measurement; Dielectric constant; Equations; Frequency measurement; Materials; Semiconductor device measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronic Test Structures (ICMTS), 2011 IEEE International Conference on
Conference_Location :
Amsterdam
ISSN :
1071-9032
Print_ISBN :
978-1-4244-8526-0
Electronic_ISBN :
1071-9032
Type :
conf
DOI :
10.1109/ICMTS.2011.5976862
Filename :
5976862
Link To Document :
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