DocumentCode :
2652652
Title :
Nanodot-type floating gate memory with high-density nanodot array formed utilizing Listeria Dps
Author :
Kamitake, Hiroki ; Ohara, Kosuke ; Uenuma, Mutsunori ; Zheng, Bin ; Ishikawa, Yasuaki ; Yamashita, Ichiro ; Uraoka, Yukiharu
fYear :
2012
fDate :
10-11 June 2012
Firstpage :
1
Lastpage :
2
Abstract :
We formed a high-density two-dimensional nanodot array by utilizing Ti-binding Dps (TD) which is a Listeria Dps with Ti-binding peptides. A high-density nanodot array over 1012 cm-2 was formed on a SiO2 at low temperature by specific adsorption of TD. The hysteresis of the MOS capacitor with nanodot array formed utilizing TD was larger than that of the MOS capacitor fabricated utilizing ferritin. This research contributes to realizing future memory devices.
Keywords :
MOS capacitors; adsorption; biochemistry; cellular biophysics; microorganisms; molecular biophysics; nanobiotechnology; proteins; titanium; Listeria Dps; MOS capacitor; SiO2; ferritin; future memory devices; high-density two- dimensional nanodot array; nanodot-type floating gate memory; specific adsorption; titanium binding peptides; Annealing; Arrays; Capacitance-voltage characteristics; Hysteresis; MOS capacitors; Metals; Proteins;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2012 IEEE
Conference_Location :
Honolulu, HI
ISSN :
2161-4636
Print_ISBN :
978-1-4673-0996-7
Electronic_ISBN :
2161-4636
Type :
conf
DOI :
10.1109/SNW.2012.6243352
Filename :
6243352
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2652652
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