• DocumentCode
    2652652
  • Title

    Nanodot-type floating gate memory with high-density nanodot array formed utilizing Listeria Dps

  • Author

    Kamitake, Hiroki ; Ohara, Kosuke ; Uenuma, Mutsunori ; Zheng, Bin ; Ishikawa, Yasuaki ; Yamashita, Ichiro ; Uraoka, Yukiharu

  • fYear
    2012
  • fDate
    10-11 June 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We formed a high-density two-dimensional nanodot array by utilizing Ti-binding Dps (TD) which is a Listeria Dps with Ti-binding peptides. A high-density nanodot array over 1012 cm-2 was formed on a SiO2 at low temperature by specific adsorption of TD. The hysteresis of the MOS capacitor with nanodot array formed utilizing TD was larger than that of the MOS capacitor fabricated utilizing ferritin. This research contributes to realizing future memory devices.
  • Keywords
    MOS capacitors; adsorption; biochemistry; cellular biophysics; microorganisms; molecular biophysics; nanobiotechnology; proteins; titanium; Listeria Dps; MOS capacitor; SiO2; ferritin; future memory devices; high-density two- dimensional nanodot array; nanodot-type floating gate memory; specific adsorption; titanium binding peptides; Annealing; Arrays; Capacitance-voltage characteristics; Hysteresis; MOS capacitors; Metals; Proteins;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop (SNW), 2012 IEEE
  • Conference_Location
    Honolulu, HI
  • ISSN
    2161-4636
  • Print_ISBN
    978-1-4673-0996-7
  • Electronic_ISBN
    2161-4636
  • Type

    conf

  • DOI
    10.1109/SNW.2012.6243352
  • Filename
    6243352
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2652652