Title :
Design of RF amplifier with tunable active inductor
Author :
Mengmeng, Liu ; Shuo, Wang ; Feng, Chen
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
A RF amplifier with tunable active inductor for wideband wireless transceiver is proposed. The active inductor consists of a MOSFET and some resistances and capacitances, the relationship between the impedance of the active inductor and the value of the consisting elements is analyzed. In order to minimize the sensitivity to process variation and power supply variation, a centre-frequency tunable circuit and a supply-independent biasing circuit is designed. All the circuits are designed and fabricated using SMIC 0.18 ¿m CMOS technology, the measurement results show that the RF amplifier with the proposed active inductor works well, the requisite modulated RF signals can be obtained, the centre frequency of the circuit can be tunable between 0.5 G to 2 GHz, and its biasing circuit is robust even the supply variation is as high as 0.8 V.
Keywords :
CMOS integrated circuits; UHF amplifiers; UHF integrated circuits; inductors; transceivers; MOSFET; RF amplifier design; SMIC CMOS technology; centre-frequency tunable circuit; frequency 0.5 GHz to 2 GHz; modulated RF signals; power supply variation; process variation sensitivity minimization; size 0.18 mum; supply-independent biasing circuit; tunable active inductor; wideband wireless transceiver; Active inductors; CMOS technology; Capacitance; Impedance; MOSFET circuits; Power supplies; Radiofrequency amplifiers; Transceivers; Tunable circuits and devices; Wireless sensor networks; RF amplifier; active inductor; supply-independent biasing circuit; tuning circuit;
Conference_Titel :
ASIC, 2009. ASICON '09. IEEE 8th International Conference on
Conference_Location :
Changsha, Hunan
Print_ISBN :
978-1-4244-3868-6
Electronic_ISBN :
978-1-4244-3870-9
DOI :
10.1109/ASICON.2009.5351470
