Title :
Impacts of silicon nanocrystal incorporation on the transfer characteristics of poly-silicon nanowire SONOS devices
Author :
Lee, Ko-Hui ; Lin, Horng-Chih ; Huang, Tiao-Yuan
Author_Institution :
Dept. of Electron. Eng. & Inst. of Electron., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
Abstract :
Gate-all-around poly-silicon nanowire (GAA poly-Si NW) SONOS devices embedded with silicon nanocrystals (Si-NCs) were fabricated and characterized. As Si-NCs are incorporated, the transfer characteristics show a large clockwise Id-Vg hysteresis and a small kink under reverse sweep. Si dangling bonds located at SiNC/nitride interfaces are suspected to be responsible for the observations.
Keywords :
dangling bonds; elemental semiconductors; hysteresis; nanofabrication; nanowires; random-access storage; silicon; Id-Vg hysteresis; Si; dangling bonds; gate-all-around poly-silicon nanowire SONOS devices; reverse sweep; silicon nanocrystal; small kink; transfer characteristics; Charge carrier processes; Clocks; Hysteresis; Logic gates; Nanoscale devices; SONOS devices; Silicon;
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2012 IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4673-0996-7
Electronic_ISBN :
2161-4636
DOI :
10.1109/SNW.2012.6243353
