Title :
Decoupling of RTS noise in high density CMOS image sensor using new test structures
Author :
Bok, Jung-Deuk ; Han, In-Shik ; Kwon, Hyuk-Min ; Park, Sang-Uk ; Jung, Yi-Jung ; Park, Seong-Hyung ; Choi, Woon-Il ; Ha, Man-Lyun ; Lee, Ju-Il ; Lee, Hi-Deok
Author_Institution :
Dept. of Electron. Eng., Chungnam Nat. Univ., Daejeon, South Korea
Abstract :
In this work, new test structures are proposed to characterize the RTS (Random Telegraph Signal) noise of the CMOS image sensor. The RTS noise of the driver transistor and the source follower transistor, as well as the source follower block itself, are measured using the proposed test structures. The probability of monitoring the RTS noise of the driver transistor and the source follower transistor is 76 % and 52 %, respectively. However, the probability of the generation of the RTS noise for the source follower block is about 74 %. Therefore, it can be said that the driver transistor dominates the RTS noise of the source follower block.
Keywords :
CMOS image sensors; driver circuits; probability; random noise; signal denoising; CMOS image sensor; RTS noise; driver transistor; probability; random telegraph signal; source follower block; source follower transistor; Conferences; Microelectronics;
Conference_Titel :
Microelectronic Test Structures (ICMTS), 2011 IEEE International Conference on
Conference_Location :
Amsterdam
Print_ISBN :
978-1-4244-8526-0
Electronic_ISBN :
1071-9032
DOI :
10.1109/ICMTS.2011.5976865