DocumentCode :
2652689
Title :
Decoupling of RTS noise in high density CMOS image sensor using new test structures
Author :
Bok, Jung-Deuk ; Han, In-Shik ; Kwon, Hyuk-Min ; Park, Sang-Uk ; Jung, Yi-Jung ; Park, Seong-Hyung ; Choi, Woon-Il ; Ha, Man-Lyun ; Lee, Ju-Il ; Lee, Hi-Deok
Author_Institution :
Dept. of Electron. Eng., Chungnam Nat. Univ., Daejeon, South Korea
fYear :
2011
fDate :
4-7 April 2011
Firstpage :
87
Lastpage :
89
Abstract :
In this work, new test structures are proposed to characterize the RTS (Random Telegraph Signal) noise of the CMOS image sensor. The RTS noise of the driver transistor and the source follower transistor, as well as the source follower block itself, are measured using the proposed test structures. The probability of monitoring the RTS noise of the driver transistor and the source follower transistor is 76 % and 52 %, respectively. However, the probability of the generation of the RTS noise for the source follower block is about 74 %. Therefore, it can be said that the driver transistor dominates the RTS noise of the source follower block.
Keywords :
CMOS image sensors; driver circuits; probability; random noise; signal denoising; CMOS image sensor; RTS noise; driver transistor; probability; random telegraph signal; source follower block; source follower transistor; Conferences; Microelectronics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronic Test Structures (ICMTS), 2011 IEEE International Conference on
Conference_Location :
Amsterdam
ISSN :
1071-9032
Print_ISBN :
978-1-4244-8526-0
Electronic_ISBN :
1071-9032
Type :
conf
DOI :
10.1109/ICMTS.2011.5976865
Filename :
5976865
Link To Document :
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