DocumentCode
2652708
Title
UHF High-Power Low-Distortion Transistor Amplifier with High-Dielectric (epsilon/sub r/=39) Substrate
Author
Kajiwara, Y. ; Noguchi, T. ; Sugiura, T. ; Takamizawa, H. ; Hirakawa, K. ; Sasaki, K.
fYear
1979
fDate
April 30 1979-May 2 1979
Firstpage
332
Lastpage
334
Abstract
A hybrid-integrated UHF power amplifier has been designed and fabricated on high-dielectric (epsilon/sub r/=39) substrate. The amplifier was developed to replace TWTs in television transposers and provides a rated output peak power of 32W with low-distortion characteristic over the 650%~770 MHz frequency range.
Keywords
Capacitance; Capacitors; Ceramics; Circuits; Conductors; Dielectric losses; Dielectric substrates; High power amplifiers; Impedance; Microstrip;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1979 IEEE MTT-S International
Conference_Location
Orlando, FL, USA
Type
conf
DOI
10.1109/MWSYM.1979.1124058
Filename
1124058
Link To Document