Title :
Effect of Cu insertion layer between top electrode and switching layer on resistive switching characteristics
Author :
Jung, Sunghun ; Oh, Jeong-Hoon ; Ryoo, Kyung-Chang ; Kim, Sungjun ; Lee, Jong-Ho ; Shin, Hyungcheol ; Park, Byung-Gook
Author_Institution :
Inter-Univ. Semicond. Res. Center (ISRC), Seoul Nat. Univ., Seoul, South Korea
Abstract :
By inserting copper (Cu) metal layer between platinum (Pt) and titanium dioxide (TiO2), we have observed both unipolar and bipolar resistive switching characteristics in Pt/Cu/TiO2/Pt stacked RRAM cell. In order to analyze the conduction mechanism, we have conducted I-V fitting. And based on measurement results of bias polarity dependency, we have found that copper plays a role as oxygen reservoir. It can explain redox mechanism in bipolar resistive switching cell.
Keywords :
copper; electrical conductivity; electrical resistivity; metallic thin films; oxidation; platinum; random-access storage; reduction (chemical); switching; titanium compounds; Cu insertion layer effect; I-V fitting; Pt-Cu-TiO2-Pt; bias polarity dependency; bipolar resistive switching characteristics; conduction mechanism; oxygen reservoir; redox mechanism; stacked RRAM cell; switching layer; top electrode; Copper; Electrodes; Fitting; Platinum; Resistance; Semiconductor device measurement; Switches;
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2012 IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4673-0996-7
Electronic_ISBN :
2161-4636
DOI :
10.1109/SNW.2012.6243355
