• DocumentCode
    2652714
  • Title

    Microsecond pulsed DC matching measurements on MOSFETs in strong and weak inversion

  • Author

    Andricciola, Pietro ; Tuinhout, Hans ; Wils, Nicole ; Schmitz, Jurriaan

  • Author_Institution
    Central R&D, NXP Semicond., Eindhoven, Netherlands
  • fYear
    2011
  • fDate
    4-7 April 2011
  • Firstpage
    90
  • Lastpage
    94
  • Abstract
    We present a first successful attempt to use microsecond DC pulses for matching measurements on 65-nm MOS transistors down to low current levels. We demonstrate that the interface states that contribute to the mismatch (if they indeed do so) in the weak and moderate inversion region must have charging and discharging time constants below 1 μs.
  • Keywords
    MOSFET; semiconductor device measurement; MOS transistors; MOSFET; microsecond pulsed DC matching measurements; size 65 nm; Correlation; Current measurement; Interface states; Logic gates; Pulse measurements; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronic Test Structures (ICMTS), 2011 IEEE International Conference on
  • Conference_Location
    Amsterdam
  • ISSN
    1071-9032
  • Print_ISBN
    978-1-4244-8526-0
  • Electronic_ISBN
    1071-9032
  • Type

    conf

  • DOI
    10.1109/ICMTS.2011.5976866
  • Filename
    5976866
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2652714