Title :
Self- compliance unipolar resistive switching and mechanism of Cu/SiO2/TiN RRAM devices
Author :
Yu, D. ; Liu, L.F. ; Huang, P. ; Zhang, F.F. ; Chen, B. ; Gao, B. ; Hou, Y. ; Han, D.D. ; Wang, Y. ; Kang, J.F. ; Zhang, X.
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
CMOS compatible Cu/SiO2/TiN-based resistive random access memory (RRAM) was fabricated and investigated. Unique self-compliance unipolar resistive switching (RS) was observed, as well as good retention and uniformity of resistance states. A physical model based on formation and rupture of Cu conductive filament (CF) is proposed, considering both thermal and electrical effect, and verified by experiments.
Keywords :
CMOS memory circuits; copper; electrical conductivity transitions; electrical resistivity; random-access storage; silicon compounds; titanium compounds; CMOS compatible resistive random access memory; Cu-SiO2-TiN; RRAM device; conductive filament; electrical effect; physical model; resistance states; self-compliance unipolar resistive switching; thermal effect; CMOS integrated circuits; Switches; Switching circuits; Thermal resistance; Tin; Voltage measurement; RRAM; SiO2; unipolar switching;
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2012 IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4673-0996-7
Electronic_ISBN :
2161-4636
DOI :
10.1109/SNW.2012.6243356
