DocumentCode :
2652730
Title :
Infrared absorption of localized vibrational modes of silicon and beryllium in low temperature molecular beam epitaxial GaAs
Author :
Manasreh, M.O. ; Stutz, C.E. ; Solomon, J.S. ; Mier, M.G. ; Kaspi, R. ; Evans, K.R.
Author_Institution :
University of Dayton Research Institute, Ohio
fYear :
1992
fDate :
21-24 Apr 1992
Firstpage :
147
Lastpage :
151
Keywords :
Atomic measurements; Electromagnetic wave absorption; Electron beams; Gallium arsenide; Impurities; Mass spectroscopy; Molecular beam epitaxial growth; Silicon; Temperature; Vibration measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semi-Insulating III-V Materials, 1992 Proceedings of the 7th Conference on
Print_ISBN :
0-7503-0242-9
Type :
conf
DOI :
10.1109/SIM.1992.752691
Filename :
752691
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2652730
بازگشت