DocumentCode
2652736
Title
4-8 GHz Miniaturized GaAs FET Amplifier
Author
Yamamura, S. ; Hidaka, N. ; Tokumitsu, Y. ; Fukuta, M.
fYear
1979
fDate
April 30 1979-May 2 1979
Firstpage
335
Lastpage
337
Abstract
A 4-8 GHz GaAs FET balanced amplifier has been constructed on a 4mm x 5mm sapphire substrate. Lumped elements used in microwave- and DC bias-circuits, and 3-dB coupler were fabricated on the substrate using thin film technology.
Keywords
Broadband amplifiers; Capacitance; Capacitors; Circuits; Frequency response; Gallium arsenide; Inductance; Message-oriented middleware; Microwave FETs; Spirals;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1979 IEEE MTT-S International
Conference_Location
Orlando, FL, USA
Type
conf
DOI
10.1109/MWSYM.1979.1124059
Filename
1124059
Link To Document