Title :
4-8 GHz Miniaturized GaAs FET Amplifier
Author :
Yamamura, S. ; Hidaka, N. ; Tokumitsu, Y. ; Fukuta, M.
fDate :
April 30 1979-May 2 1979
Abstract :
A 4-8 GHz GaAs FET balanced amplifier has been constructed on a 4mm x 5mm sapphire substrate. Lumped elements used in microwave- and DC bias-circuits, and 3-dB coupler were fabricated on the substrate using thin film technology.
Keywords :
Broadband amplifiers; Capacitance; Capacitors; Circuits; Frequency response; Gallium arsenide; Inductance; Message-oriented middleware; Microwave FETs; Spirals;
Conference_Titel :
Microwave Symposium Digest, 1979 IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
DOI :
10.1109/MWSYM.1979.1124059
