Title :
Rectifying characteristics and implementation of n-Si/HfO2 based devices for 1D1R-based cross-bar memory array
Author :
Zhang, F.F. ; Huang, P. ; Chen, B. ; Yu, D. ; Fu, Y.H. ; Ma, L. ; Gao, B. ; Liu, L.F. ; Liu, X.Y. ; Kang, J.F.
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
Excellent rectifying characteristics are demonstrated in the fab-friendly n-Si/HfO2/Ni/TiN devices with rectification ratio of >;107 and the driving current of 1mA as a 1D-like selector. The rectified unipolar switching behaviors are demonstrated in the 1D1R cell structured with a diode-like device of n-Si/HfO2/Ni/TiN (1D) and a unipolar RRAM of n+-Si/HfOx/Ni/TiN (1R). Based on the measured I-V characteristics, these excellent selection behavior can be implemented in the cross-bar memory array of >;64K bits RRAM with large read margin.
Keywords :
Schottky diodes; elemental semiconductors; hafnium compounds; nickel; random-access storage; resistors; silicon; titanium compounds; 1D1R-based cross-bar memory array; I-V characteristics; ID-like selector; IDIR cell structured; Si-HfO2-Ni-TiN; cross-bar memory array; diode-like device; driving current; excellent selection behavior; fab-friendly devices; large read margin; rectification ratio; rectifying characteristics; unipolar RRAM; unipolar switching behaviors; Abstracts; Area measurement; Current measurement; Schottky diodes; Silicon; Switches; Tin; 1D1R; rectifying; resistive switching;
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2012 IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4673-0996-7
Electronic_ISBN :
2161-4636
DOI :
10.1109/SNW.2012.6243357
