DocumentCode :
2652749
Title :
Quantitative analysis of electron traps in annealed semi-insulating gallium arsenide epitaxial layers grown by molecular beam epitaxy at low temperature with a novel zero quiescent bias voltage transient current spectroscopy technique
Author :
Lau, W.S. ; Goo, C.H. ; Chong, T.C.
Author_Institution :
National University of Singapore
fYear :
1992
fDate :
21-24 Apr 1992
Firstpage :
153
Lastpage :
156
Keywords :
Annealing; Electron traps; Epitaxial layers; Gallium arsenide; Molecular beam epitaxial growth; Spectroscopy; Substrates; Temperature; Testing; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semi-Insulating III-V Materials, 1992 Proceedings of the 7th Conference on
Print_ISBN :
0-7503-0242-9
Type :
conf
DOI :
10.1109/SIM.1992.752692
Filename :
752692
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2652749
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