Title :
Oxygen-induced high-k degradation in TiN/HfSiO gate stacks
Author :
Hosoi, Takuji ; Odake, Yuki ; Chikaraishi, Keisuke ; Arimura, Hiroaki ; Kitano, Naomu ; Shimura, Takayoshi ; Watanabe, Heiji
Author_Institution :
Grad. Sch. of Eng., Osaka Univ., Suita, Japan
Abstract :
We have investigated the diffusion kinetics of Hf in TiN/HfSiO gate stacks. The Hf upward diffusion is found to be independent of interfacial SiO2 growth, but depends on the amount of oxygen in the gate stacks. It is also revealed that Hf diffusion into TiN electrode occurs at above 650°C and leads to high-k degradation.
Keywords :
diffusion; electrodes; hafnium compounds; high-k dielectric thin films; titanium compounds; TiN-HfSiO; diffusion kinetics; electrode; gate stacks; oxygen induced high-k degradation; Hafnium; High K dielectric materials; Logic gates; Oxidation; Silicon; Surface treatment; Tin;
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2012 IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4673-0996-7
Electronic_ISBN :
2161-4636
DOI :
10.1109/SNW.2012.6243358
