Title :
Orientation and size effects on ballistic electron transport properties in gate-all-around rectangular germanium nanowire FETs
Author :
Mori, Seigo ; Morioka, Naoya ; Suda, Jun ; Kimoto, Tsunenobu
Author_Institution :
Dept. of Electron. Sci. & Eng., Kyoto Univ., Kyoto, Japan
Abstract :
We calculated the conduction band structure of GeNWs by a tight-binding model and obtained the fundamental understanding of electron transport characteristics in [001], [110], [111], and [112] GeNW FETs. The simulation of ballistic electron transport revealed that [110] GeNW FETs on the (001) face achieve high drive current as well as high injection velocity, being the best choice for n-channel FETs.
Keywords :
MOSFET; ballistic transport; conduction bands; elemental semiconductors; germanium; nanowires; size effect; FinFET; Ge; anisotropic valleys; ballistic electron transport properties; channel material; conduction band; conduction band structure; electronic states; gate-all-around GeNW FET; gate-all-around rectangular germanium nanowire FET; injection velocity; n-channel field-effect transistors; p-channel field-effect transistors; size effects; Drives; Effective mass; FETs; Face; Germanium; Logic gates; Mathematical model;
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2012 IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4673-0996-7
Electronic_ISBN :
2161-4636
DOI :
10.1109/SNW.2012.6243360
