DocumentCode :
2652814
Title :
X-ray topography used as a routine tool in the evaluation of the crystal quality of GaAs substrate wafers
Author :
Bassignana, I.C. ; Macquistan, D.A.
Author_Institution :
Advanced Technology Laboratory, Bell-Northem Research Ltd., Canada
fYear :
1992
fDate :
21-24 Apr 1992
Firstpage :
183
Lastpage :
188
Keywords :
Biological materials; Crystalline materials; Gallium arsenide; Grain boundaries; Microscopy; Semiconductor materials; Substrates; Surfaces; Voltage; X-ray imaging;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semi-Insulating III-V Materials, 1992 Proceedings of the 7th Conference on
Print_ISBN :
0-7503-0242-9
Type :
conf
DOI :
10.1109/SIM.1992.752697
Filename :
752697
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2652814
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