Title :
Mechanisms of ambient dependent mobility degradation in the graphene MOSFETs on SiO2 substrate
Author :
Lee, Y.G. ; Kang, C.G. ; Cho, C. ; Kim, Y.H. ; Hwang, H.J. ; Kim, J.J. ; Jung, U.J. ; Park, E.J. ; Kim, M.W. ; Lee, B.H.
Author_Institution :
Sch. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol., Gwangju, South Korea
Abstract :
Two different mechanisms affecting the device instability and mobility degradation at graphene MOSFET on SiO2 substrate and their time constant, 40μsec and ~ 370μsec, have been identified. Oxygen/H2O reaction at the surface of graphene was identified as a major source of device hysteresis causing mobility degradation and device instability.
Keywords :
MOSFET; fullerene devices; graphene; hysteresis; C; SiO2; ambient dependent mobility degradation; device hysteresis; device instability; graphene MOSFET; mobility degradation; time constant; Charge carrier processes; Degradation; Hysteresis; MOSFETs; Temperature dependence; Temperature measurement; Tunneling;
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2012 IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4673-0996-7
Electronic_ISBN :
2161-4636
DOI :
10.1109/SNW.2012.6243362
