Title :
Electrical estimation of channel dopant uniformity using test MOSFET array
Author :
Terada, Kazuo ; Sanai, Kazuhiko ; Tsuji, Katsuhiro ; Tsunomura, Takaaki ; Nishida, Akio ; Mogami, Tohru
Author_Institution :
Fac. of Inf. Sci., Hiroshima City Univ., Hiroshima, Japan
Abstract :
The dopant uniformity in an MOSFET channel is estimated using the test MOSFET array which includes many MOSFETs with different channel length. Takeuchi coefficient as a function of the channel length is calculated from the measured threshold voltage data. The electrical channel length as a function of the gate voltage is extracted using channel resistance method. It is found that those data show the similar degree of the dopant uniformity for MOSFETs having various channel structures.
Keywords :
MOSFET; semiconductor device measurement; semiconductor device testing; MOSFET channel; Takeuchi coefficient; channel dopant uniformity; channel resistance method; channel structures; electrical channel length; electrical estimation; gate voltage; test MOSFET array; threshold voltage data; Arrays; Channel estimation; Logic gates; MOSFET circuits; Resistance; Threshold voltage; Voltage measurement;
Conference_Titel :
Microelectronic Test Structures (ICMTS), 2011 IEEE International Conference on
Conference_Location :
Amsterdam
Print_ISBN :
978-1-4244-8526-0
Electronic_ISBN :
1071-9032
DOI :
10.1109/ICMTS.2011.5976871
